300 mm Epi PP Wafer: Is There Sufficient Gettering?

300 mm Epi PP Wafer: Is There Sufficient Gettering?

著者名:

Graff,D.

掲載資料名:

High Purity Silicon VI : proceedings of the sixth International Symposium

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4218

発行年:

2000

開始ページ:

319

終了ページ:

330

総ページ数:

12

出版情報:

Pennington, N.J. — Bellingham, Wash.: Electrochemical Society — SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9781566772846 [1566772842]

言語:

英語

請求記号:

P63600/4218

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00011937
シリーズID:	PA00000029
会議名:	Internationa Symposium on High Purity Silicon [ SPIE 0819438901 ] : Meeting of the Electrochemical Society
回次:	6th : 198th
会議開催地:	Phoenix, AZ, USA
会議開催年:	2000.10.22-2000.10.27

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1 国際会議録 300 mm Epi PP Wafer: Is There Sufficient Gettering? Graff, D., Lambert, U., Schmolke, R., Wablich, R., Siebert, W., Daub, E., Ammon, W.v. Electrochemical Society	7 国際会議録 Formation and Control of Defects in Nitrogen Doped Silicon Crystals （Invited Paper） Huber, A., Lambert, U., Hackl, W., Ammon, W.v. Electrochemical Society
2 国際会議録 Advanced Silicon Wafers for 0.18 μm Design Rule and Beyond: Epi and fFLASH!* Schmolke, R., Blietz, M., Schauer, R., Zemke, D., Oelkrug, H., Ammon, W.v., Lambert, U., Grtlf, D. Electrochemical Society	8 国際会議録 High-temperature annealed silicon wafers Graef, D., Wahlich, R., Krottenthaler, P., Feijoo, D., Lambert, U, Wagner, P. Electrochemical Society
3 国際会議録 Advanced Silicon Wafers for 0.18 μm Design Rule and Beyond: Epi and fFLASH! Schmolke,R., Blietz,M., Schauer,R., Zemke,D., Oelkrug,H., Ammon,W.v., Lambert,U., Graf,D. Electrochemical Society, SPIE-The International Society for Optical Engineering	9 国際会議録 BULK MICRO DEFECTS OF P/P- EPITAXIAL SILICON WITH WAFERS WITH NITROGEN DOPED SUBSTRATES AND THEIR GETTERING BEHAVIOR Schmolke, R., Blietz, M., Hoelzl, R., Menzel, D., Bender, H. Electrochemical Society
4 国際会議録 The Impact of Crystal Quality by Delineation of COP and the Impact on the Silicon Wafer Surface Graef, D., Suhren, M., Lambert, U., Schmolke, R., Ehiert, A., Ammon, W.v., Wagner, P. Electrochemical Society	10 国際会議録 GATE OXIDE RELATED BULK PROPERTIES OF OXYGEN DOPED FLOATING ZONE AND CZOCHRALSKI SILICON Ammon, W.v., Ehlert, A., Lambert, U., Graef, D., Brohl, M., Wagner, P. Electrochemical Society
5 国際会議録 ARGON-ANNEALED 300mm WAFERS COMPLEMENTING PP- EPITAXIAL LAYERS Muller, T., Siebert, W., Messmann, K., Wablich, R., Krottenthaler, P., Hoelzl, R., Ikari, A., von Ammon, W. Electrochemical Society	11 国際会議録 IMPACT OF NITROGEN DOPING IN SILICON ONTO GATE OXIDE INTEGRITY Huber, A., Kapser, M., Grabmeier, J., Lambert, U., Ammon, W.v., Pech, R. Electrochemical Society
6 国際会議録 ARGON-ANNEALED 300mm WAFERS COMPLEMENTING PP- EPITAXIAL LAYERS Muller, T., Siebert, W., Messmann, K., Wablich, R., Krottenthaler, P., Hoelzl, R., Ikari, A., von Ammon, W. Electrochemical Society	12 国際会議録 The Impact of the Dwell Time Above 900℃ During Crystal Growth on the Gate Oxide Integrity of Silicon Wafers Dornberger, E., von Ammon, W., Graef, D., Lambert, U., Miller, A., Oelkrug, H., Ehlert, A. Electrochemical Society

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