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Direct Proof of Argon Atoms Incorporated Into High-Purity Silicon Single Crystals During Growth in Argon Gas Ambient

著者名:
Ulyashin,A.G.
Job,R.
Fahrner,W.R.
Mudryi,A.V.
Patuk,A.I.
Shakin,I.A.
さらに 1 件
掲載資料名:
High Purity Silicon VI : proceedings of the sixth International Symposium
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
4218
発行年:
2000
開始ページ:
66
終了ページ:
76
総ページ数:
11
出版情報:
Pennington, N.J. — Bellingham, Wash.: Electrochemical Society — SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9781566772846 [1566772842]
言語:
英語
請求記号:
P63600/4218
資料種別:
国際会議録

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