Effect of Shape of Crystal-Melt Interface on Point Defect Reaction in Silicon Crystals
- 著者名:
- 掲載資料名:
- High Purity Silicon VI : proceedings of the sixth International Symposium
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 4218
- 発行年:
- 2000
- 開始ページ:
- 31
- 終了ページ:
- 43
- 総ページ数:
- 13
- 出版情報:
- Pennington, N.J. — Bellingham, Wash.: Electrochemical Society — SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9781566772846 [1566772842]
- 言語:
- 英語
- 請求記号:
- P63600/4218
- 資料種別:
- 国際会議録
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3
国際会議録
SIMULATION OF THE POINT DEFECT DIFFUSIONAND GROWTH CONDITION FOR DEFECT FREE CZ SILICON CRYSTAL
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4
国際会議録
SIMULATION OF THE POINT DEFECT DIFFUSIONAND GROWTH CONDITION FOR DEFECT FREE CZ SILICON CRYSTAL
Electrochemical Society |
Electrochemical Society |
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