Growth and Si-doping of GaN on GaAs(001) by MBE

Growth and Si-doping of GaN on GaAs(001) by MBE

著者名:

掲載資料名:

Fourth International Conference on Thin Film Physics and Applications : 8-11 May 2000, Shanghai, China : proceedings

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

4086

発行年:

2000

開始ページ:

306

終了ページ:

310

総ページ数:

5

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819437297 [0819437298]

言語:

英語

請求記号:

P63600/4086

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00011824
シリーズID:	PA00000029
会議名:	International Conference on Thin Film Physics and Applications
回次:	2000 : 4th
会議開催地:	Shanghai, China
会議開催年:	2000.05.08-2000.05.11

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