An investigation of long and short time-constant persistent photoconductivity in undoped GaN grown by RF-Plasma assisted molecular beam exitaxy

An investigation of long and short time-constant persistent photoconductivity in undoped GaN grown by RF-Plasma assisted molecular beam exitaxy

著者名:

掲載資料名:

GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

595

発行年:

2000

開始ページ:

W11.45.1

出版情報:

Warrendale, Pa.: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558995031 [155899503X]

言語:

英語

請求記号:

M23500/595

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020895
シリーズID:	PA00000011
会議名:	Symposium on GaN and Related Alloys
回次:	1999
会議開催地:	Boston, Massachusetts, USA
会議開催年:	1999.11.28-1999.12.03

類似資料:

1 国際会議録 A Comparison of Magnesium and Beryllium Acceptors in GaN Grown by rf-Plasma Assisted Molecular Beam Epitaxy Ptak, A. J., Myers, T. H., Wang, Lijun, Giles, N. C., Moldovan, M., Cunha, C.R. Da, Hornak, L. A., Tian, C., Hockett, R. … Materials Research Society	7 国際会議録 Microstructure of GaN Films Grown by RF-Plasma Assisted Molecular Beam Epitaxy Komninou, Philomela, Kehagias, Thomas, Kioseoglou, Joseph, Sarigiannidou, Eirini, Karakostas, Theodoros, Nouet, Gerard, … Materials Research Society
2 国際会議録 Hydrogenation of Undoped and Nitrogen-Doped CdTe and ZnSe Grown by Molecular-Beam Epitaxy Hirsch, L. S., Setzler, S. D., Ptak, A. J., Giles, N. C., Myers, T. H. MRS - Materials Research Society	8 国際会議録 GaN Layers Re-Grown on Etched GaN Templates by Plasma Assisted Molecular Beam Epitaxy He, L., Gu, X., Xie, J, Yun, F., Baski, A.A., Morkoc, H. Materials Research Society
3 国際会議録 Formation of BN and AlBN during nitridation of sapphire using RF plasma sources Ptak, A. J., Ziemer, K. S., Holbert, L. J., Stinesring, C. D., Myers, T. H. MRS-Materials Research Society	9 国際会議録 A study of the effect of V/III flux ratio and substrate temperature on the In incorporation efficiency in InxGa1-x/GaN heterostructures grown by RF … O'Steen, M. L., Fedler, F., Hauenstein, R. J. MRS-Materials Research Society
4 国際会議録 Thermal Activation of Beryllium in GaN Grown by RF-Plasma Molecular Beam Epitaxy VanMil, B.L., Lee, Kyoungnae, Wang, Lijun, Giles, N.C., Myers, T.H. Materials Research Society	10 国際会議録 Effect of Rapid Thermal Annealing: Red and Blue Shift in Photoluminescence of GaNAs Grown By RF Plasma-Assisted Molecular Beam Epitaxy Loke, W.K., Yoon, S.F., Ng, T.K., Wang, S.Z., Fan, W.J. Materials Research Society
5 国際会議録 Raman Studies on Oxygen Doped GaN Grown by Molecular Beam Epitaxy Papadimitriou, D., Ptak, A.J., Korakakis, D., Giles, N.C., Myers, T.H. Materials Research Society	11 国際会議録 Low Resistance Ohmic Contact on p-type GaN Grown by Plasma-Assisted Molecular Beam Epitaxy Yoo, Myung C., Lee, J. W., Myoung, J. M., Shim, K. H., Kim, K. MRS - Materials Research Society
6 国際会議録 In Situ Investigation of Surface Stoichiometry During InGaN and GaN Growth by Plasma-Assisted Molecular Beam Epitaxy Using RHEED-TRAXS Tompkins. Randy P., VanMil, Brenda L., Schires, Eric D., Lee, Kyoungnae, Chye, Yewhee, Lederman, David, Myers, David H. Materials Research Society	12 国際会議録 High Quality p-Type GaN Films Grown by Plasma-Assisted Molecular Beam Epitaxy Myoung, J. M., Kim, C., Shim, K. H., Gluschenkov, O., Kim, K., Yoo, M. C. MRS - Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12