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Characterization of InGaN quantum wells grown by molecular beam epitaxy (MBE) using ammonia as the nitrogen source

著者名:
掲載資料名:
GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
595
発行年:
2000
開始ページ:
W11.37.1
出版情報:
Warrendale, Pa.: MRS-Materials Research Society
ISSN:
02729172
ISBN:
9781558995031 [155899503X]
言語:
英語
請求記号:
M23500/595
資料種別:
国際会議録

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