Blank Cover Image

Correlation between structural properties and optical amplification in InGaN/GaN heterostructures grown by molecular beam epitaxy

著者名:
Kaschner, A.
Holst, J.
Gfug, U. von
Hoffmann, A.
Bertram, F.
Riemann, T.
Rudloff, D.
Fischer, P.
Christen, J.
Averbeck, R.
Riechert, H.
さらに 6 件
掲載資料名:
GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
595
発行年:
2000
開始ページ:
W11.34.1
出版情報:
Warrendale, Pa.: MRS-Materials Research Society
ISSN:
02729172
ISBN:
9781558995031 [155899503X]
言語:
英語
請求記号:
M23500/595
資料種別:
国際会議録

類似資料:

1 国際会議録 Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy

Einfeldt, S., Bottcher, T., Hommel, D., Selke, H., Ryder, P. L., Bertram, F., Riemann, T., Rudloff, D., Christen, J.

MRS - Materials Research Society
7 国際会議録 Optical Investigations of AlGaN on GaN Epitaxial Films

Steude, G., Christmann, T., Meyer, B. K., Goeldner, A., Hoffmann, A., Bertram, F., Christen, J., Amano, H., Akasaki, I.

MRS - Materials Research Society
2 国際会議録 Impact of Epitaxial Lateral Overgrowth on the Recombination Dynamics in GaN Determined by Time Resolved Micro-Photoluminescence Spectroscopy

Holst, J., Kaschner, A., Hoffmann, A., Broser, I., Fischer, P., Bertram, F., Riemann, T., Christen, J., Hiramatsu, K., …

Trans Tech Publications
8 国際会議録 Mechanisms of Optical Gain in Cubic GaN and InGaN

Holst, J., Hoffmann, A., Broser, I., Frey, T., Schottker, B., As, D. J., Schikora, D., Lischka, K.

MRS - Materials Research Society
3 国際会議録 Comparison of Different Epitaxial Lateral Overgrowth GaN Structures using SiO2 and Tungsten Mask by Cathodoluminescence Microscopy and Micro-Raman Spectroscopy

Bertram, F., Riemann, T., Rudloff, D., Christen, J., Kaschner, A., Hoffmann, A., Hiramatsu, K.

Trans Tech Publications
9 国際会議録 Optical Evaluation of Pretreated InGaN Quantum Well Structures

Bottcher, T., Bertram, F., Bergman, P., Ueta, A., Christen, J., Hommel, D.

Materials Research Society
4 国際会議録 Lasing and Gain Mechanisms in AlGaN-GaN-Double Heterostructures:Correlation with Structural Properties

Holst,J., M.Straｦﾂburg, Ledentsov,N.N., Eckey,L., Goldner,A., Hoffmann,A., Hempel,T., Rudloff,D., Bertram,F., …

Trans Tech Publications
10 国際会議録 Optical and Structural Properties of AlGaN/GaN Quantum Wells Grown by Molecular Beam Epitaxy

Grandjean, N., Massies, J., Leroux, M., Laugt, M., Lefebvre, P., Gil, B., Allegre, J., Bigenwald, P.

MRS - Materials Research Society
5 国際会議録 GaN-based LEDs grown by molecular beam epitaxy (Invited Paper)

Averbeck,R., Graber,A., Tews,H., Bernklau,D., Barnhofer,U., Riechert,H.

SPIE-The International Society for Optical Engineering
11 国際会議録 STRUCTURAL DEFECTS IN GaN EPILAYERS GROWN BY GAS SOURCE MOLECULAR BEAM EPITAXY

Sitar, Z., Paisley, M.J., Yan, B., Davis, R.F.

Materials Research Society
6 国際会議録 Optical Characterization of InGaN Layers and GaN/InGaN/GaN Double Heterostructures

Graber,A., Averbeck,R., Barnhofer,U., Riechert,H., Tews,H.

Trans Tech Publications
12 国際会議録 The carriers localization influence on the optical properties of GaAsN/GaAs heterostructures grown by molecular-beam epitaxy

Kryzhanovskaya, N.V., Gladyshev, A.G., Sizov, D.S., Kovsh, A.R., Tsatsul'nikov, A.F., Chi, J.Y., Wang, J.S., Wei, L., …

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12