Blank Cover Image

Electrical transport of an AlGaN/GaN two-dimensional electron gas

著者名:
Saxler, A.
Debray, P.
Perrin, R.
Elhamri, S.
Mitchel, W. C.
Elsass, C. R.
Smorckkova, I. P.
Heying, B.
Haus, E.
Fini, P.
Ibbetson, J. P.
Keller, S.
Petroff, P. M.
DenBaars, S. P.
Mishra, U. K.
Speck, J. S.
さらに 11 件
掲載資料名:
GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
595
発行年:
2000
開始ページ:
W11.10.1
出版情報:
Warrendale, Pa.: MRS-Materials Research Society
ISSN:
02729172
ISBN:
9781558995031 [155899503X]
言語:
英語
請求記号:
M23500/595
資料種別:
国際会議録

類似資料:

1 国際会議録 Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure

Elhamri, S., Saxler, A., Cull, D., Mitchel, W.C., Elsass, C.R., Smorchkova, I. P., Heying, B., Poblenz, C., Fini, P., …

Materials Research Society
7 国際会議録 Formation and Electronic Transport of 2D Electron and Hole Gases in AlGaN/GaN Heterostructures

Link, A., Ambacher, O., Smorchkova, I.P., Mishra, U.K., Speck, J.S., Stutzmann, M.

Trans Tech Publications
2 国際会議録 Maskless lateral epitaxial overgrowth of GaN on sapphire

Fini, P., Marchand, H., Ibbetson, J. P., Moran, B., Zhao, L., DenBaars, S. P., Speck, J. S., Mishra, U. K.

MRS-Materials Research Society
8 国際会議録 Substrate Surface Treatments and "Controlled Contamination" in GaN/Sapphire MOCVD

Golan, Yuval, Fini, Paul, DenBaars, Steven P., Speck, James S.

MRS - Materials Research Society
3 国際会議録 Polarization Induced 2DEG In MBE-Grown AlGaN/GaN HFETs: On The Origin, DC And RF Characterization

Ventury, Ramakrishna, Smorchkova, I.P., Elsass, Christopher R., Heying, Benjamin, Keller, Stacia, Mishra, Umesh K.

Materials Research Society
9 国際会議録 Effect of AlGaN/GaN strained layer superlattice period on InGaN MQW laser diodes

Hansen, M., Abare, A. C., Kozodoy, P., Katona, T. M., Craven, M. D., Speck, J. S., Mishra, U. K., Coldren, L. A., …

MRS-Materials Research Society
4 国際会議録 Polarity determination for MOCVD growth of GaN on Si(111) by convergent beam electron diffraction

Zhao, L., Marchand, H., Fini, P., DenBaars, S. P., Mishra, U. K., Speck, J. S.

MRS-Materials Research Society
10 国際会議録 High Electron Mobility in Free-Standing GaN Substrates

Saxler, A., Look, D. C., Elhamri, S., Sizelove, J., Cull, D., Mitchel, W.C., Callahan, M., Bliss, D., Bouthillette, L., …

Materials Research Society
5 国際会議録 Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process

Marchand, H., Ibbetson, J. P., Fini, P. T., Wu, X. H., Keller, S., DenBaars, S. P., Speck, J. S., Mishra, U. K.

MRS - Materials Research Society
11 国際会議録 MOVPE Growth of High Electron Mobility AlGaN/GaN Heterostructures

Redwing, J. M., Flynn, J. S., Tischler, M. A., Mitchel, W., Saxler, A.

MRS - Materials Research Society
6 国際会議録 Influence of Growth Parameters on the Deep Level Spectrum in MBE-Grown n-GaN

Arehart, A.R., Poblenz, C., Heying, B., Speck, J.S., Mishra, U.K., DenBaars, S.P., Ringel, S.A.

Materials Research Society
12 国際会議録 Cleaved Facets in GaN by Water Fusion of GaN to InP

Sink, R. K., Keller, S., Keller, B. P., Babic, D. I., Holmes, A. L., Kapolnek, D., Wu, X. H., Speck, J. S., Denbaars, S. …

MRS - Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12