*Properties and effects of hydrogen in GaN

*Properties and effects of hydrogen in GaN

著者名:

Pearton, S. J.

掲載資料名:

GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

595

発行年:

2000

開始ページ:

W10.6.1

出版情報:

Warrendale, Pa.: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558995031 [155899503X]

言語:

英語

請求記号:

M23500/595

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020895
シリーズID:	PA00000011
会議名:	Symposium on GaN and Related Alloys
回次:	1999
会議開催地:	Boston, Massachusetts, USA
会議開催年:	1999.11.28-1999.12.03

類似資料:

1 国際会議録 Processing and device performance of GaN power rectifiers Zhang, A. P., Dang, G. T., Cao, X. A., Cho, H., Ren, F., Han, J., Chyi, J-I., Lee, C-M., Nee, T-E., Chuo, C-C., Chi, … MRS-Materials Research Society	7 国際会議録 Device Processing For GaN High Power Electronics Pearton, Stephen J., Cao, X.A., Cho, H., Lee, K.P., Monier, C., Ren, F., Dang, G., Zhang, A.P., Johnson, W., LaRoche, … Materials Research Society
2 国際会議録 GaN Power Devices Pearton, S.J., Ren, F., Zhang, A.P., Dang, G., Cac, X.A., Lee, K.P., Cho, H., Gila, B.P., Johnson, J.W., Monier, C., … Electrochemical Society	8 国際会議録 Comparison of implant isolation species for GaN field-effect transistor structure Dang, G., Cao, X. A., Ren, F., Pearton, S. J., Han, J., Baca, A. G., Shul, R. J., Wilson, R. G. MRS-Materials Research Society
3 国際会議録 Temperature Dependent Performance of GaN Schottky Diode Rectifiers Cao, X. A., Dang, G. T., Zhang, A. P., Ren, F., Pearton, S. J., Lee, C. -M., Chuo, C. -C., Chyi, J. -I., Chi, G. C., … Trans Tech Publications	9 国際会議録 Properties of H, O and C in GaN Pearton, S. J., Abernathy, C. R., Lee, J. W., Vartuli, C. B., MacKenzie, J. D., Ren, F., Wilson, R. G., Zavada, J. M., … MRS - Materials Research Society
4 国際会議録 Low Dit Dielectric/GaN MOS Systems Hong, M., Ng, H.M., Kwo, J., Kortan, A.R., Baillargeon, J.N., Chu, S.N.G., Mannaerts, J.P., Cho, A.Y., Ren, F., … Electrochemical Society	10 国際会議録 GaN Power Rectifiers and Field-Effect Transistors on Free-Standing GaN Substrates Irokawa, Y., Luo, B., Kim, Jihyun, Kang, B.S., LaRoche, J.R., Ren, F, Pan, C.-C., Chen, G.T., Chyi, J.-I., Park, S.S., … Electrochemical Society
5 国際会議録 Reactivation of Acceptors and Trapping of Hydrogen in GaN/InGaN Double Heterostructures Pearton, S. J., Bendi, S., Jones, K. S., Krishnamoorthy, V., Wilson, R. G., Ren, F., Karlicek, R. F., Jr., Stall, R. A. MRS - Materials Research Society	11 国際会議録 Hydrogen in GaN Experiments Pearton, S. J., Lee, J. W., Wilson, R. G., Zavada, J. M., Weinstein, M. G., Song, C. Y., Stavola, M. MRS - Materials Research Society
6 国際会議録 GaN pnp Bipolar Junction Transistors Operated To 250℃ Zhang, A.P., Dang, G., Ren, F., Han, J., Monier, C., Baca, A.G., Cao, X.A., Cho, H., Abernathy, C.R., Pearton, S.J. Materials Research Society	12 国際会議録 High density plasma damage induced in n-GaN schottky diodes using Cl2/Ar discharges Zhang, A. P., Dang, G., Ren, F., Cao, X. A., Cho, H., Lambers, E. S., Pearton, S. J., Shul, R. J., Zhang, L., Baca, A. … MRS-Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12