Fabrication and characterization of GaN junction field effect transistors | 東京工業大学附属図書館文献データベース

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Fabrication and characterization of GaN junction field effect transistors

著者名:

Willison, C. G.

DenBaars, S. P.

さらに 4 件

掲載資料名:

GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

595

発行年:

2000

開始ページ:

W4.9.1

出版情報:

Warrendale, Pa.: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558995031 [155899503X]

言語:

英語

請求記号:

M23500/595

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020895
シリーズID:	PA00000011
会議名:	Symposium on GaN and Related Alloys
回次:	1999
会議開催地:	Boston, Massachusetts, USA
会議開催年:	1999.11.28-1999.12.03

類似資料:

1 国際会議録 High-density plasma-induced etch damage of GaN Shul, R.J., Zhang, L., Baca, A.G., Willison, C.G., Han, J., Pearton, S.J., Ren, F., Zolper, J.C., Lester, L.F. Materials Research Society	7 国際会議録 0.5 μm E/D AlGaAs/GaAs Heterostructure Field Effect Transistor Technology with DEFT Threshold Adjust Implant Baca, A.G., Sherwin, M.E., Zolper, J.C., Shul, R.J., Briggs, R.D., Heise, J.A., Robertson, P.J., Hafich, M.F. Electrochemical Society
2 国際会議録 High-Density Plasma Etching of Group-III Nitride Films for Device Application Shul, R., Zhang, L, Baca, A., Han, J., Crawford, M., Willison, C., Pearton, S., Ren, F., Zolper, J., Lester, L. Electrochemical Society	8 国際会議録 Inductively Coupled High-Density Plasma-Induced Etch Damage Of GaN MESFETs Shul, Randy J., Zhang, L., Baca, A.G., Willison, Christi G., Hans, J., Pearton, S.J., Lee, K.P., Ren, F. Materials Research Society
3 国際会議録 Complementary GaAs Junction-Gated Heterostructure Field Effect Transistor Fabrication for Integrated Circuits Baca, A.G., Zolper, J.C., Sherwin, M.E., Robertson, P.J., Shul, R.J., Howard, A.J., Rieger, D.J., Klem, J.F. Electrochemical Society	9 国際会議録 GaN pnp Bipolar Junction Transistors Operated To 250℃ Zhang, A.P., Dang, G., Ren, F., Han, J., Monier, C., Baca, A.G., Cao, X.A., Cho, H., Abernathy, C.R., Pearton, S.J. Materials Research Society
4 国際会議録 Current Gain Simulation Of Npn AlGaN/GaN Heterojunction Bipolar Transistors Monier, C., Pearton, S.J., Baca, Albert G., Chang, P.C., Zhang, L., Han, J., Shul, R.J., Ren, F., LaRoche, J. Materials Research Society	10 国際会議録 Comparison of implant isolation species for GaN field-effect transistor structure Dang, G., Cao, X. A., Ren, F., Pearton, S. J., Han, J., Baca, A. G., Shul, R. J., Wilson, R. G. MRS-Materials Research Society
5 国際会議録 GaN Metal Oxide Semiconductor Field Effect Transistors Ren, F., Pearton, S.J., Abernathy, C.R., Baca, A.G., Cheng, P., Han, J., Shul, R.J., Chu, S.N.G., Hong, M., Lothian, … Electrochemical Society	11 国際会議録 AlGaN/GaN Heterojunction Bipolar Transistor: Limiting Factors and Optimum Design for High Frequency Performances Monier, C., Baca, A.G., Pearton, S.J., Ren, F., Chang, P.C., Zhang, L., LaRoche, J.R., Han, J., Shut, R.J. Electrochemical Society
6 国際会議録 GaN Etching in BCl3/Cl2 Plasmas Shul, R. J., Ashby, C. I. H., Willison, C. G., Zhang, L., Han, J., Bridges, M. M., Pearton, S. J., Lee, J. W., Lester, … MRS - Materials Research Society	12 国際会議録 Group-III Nitride Etch Selectivity in BCl3/Cl2 ICP Plasmas Shul, R. J., Zhang, L., Willison, C. G., Han, J., Pearton, S. J., Hong, J., Abernathy, C. R., Lester, L. F. MRS - Materials Research Society

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