Transport properties of p-Hg1-xCdxTe(x=0.22)
- 著者名:
- Moravec,P. ( Charles Univ.(Czech Republtc) )
- Grill,R.
- Franc,J.
- Hoschl,P.
- Belas,E.
- 掲載資料名:
- Fourth International Conference on Material science and material properties for infrared optoelectronics : 29 September-2 October 1998, Kiev, Ukraine
- シリーズ名:
- Proceedings of SPIE - the International Society for Optical Engineering
- シリーズ巻号:
- 3890
- 発行年:
- 1999
- 開始ページ:
- 313
- 終了ページ:
- 320
- 出版情報:
- Bellingham, Washington: SPIE - The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819434913 [0819434914]
- 言語:
- 英語
- 請求記号:
- P63600/3890
- 資料種別:
- 国際会議録
類似資料:
1
国際会議録
Determination of diffusion lengths of minority carriers in Hg1-xCdxTe (x。チ0.2 to 0.3) by EBIC method
SPIE-The International Society for Optical Engineering |
7
国際会議録
Ellipsometry and Raman spectroscopy of MBE-grown undoped Si-Si0.78Ge0.22/(001)Si superlattices
SPIE-The International Society for Optical Engineering |
2
国際会議録
Characterization of diffusion length of minority carriers in(CdZn)Te at temperatures of 80 to 300 K
SPIE - The International Society for Optical Engineering |
Trans Tech Publications |
SPIE-The International Society for Optical Engineering |
9
国際会議録
A Mixed Potential Sensor Based On A Ce0.8Gd0.22O1.9 Electrolyte and Platinum And Gold Electrodes
Electrochemical Society |
SPIE-The International Society for Optical Engineering |
10
国際会議録
The effects of passivation and temperature on the strain of Al0.22Ga0.78N/GaN heterostructuers
Society of Photo-optical Instrumentation Engineers |
SPIE-The International Society for Optical Engineering |
11
国際会議録
Very Low Deep Level AlxGa1-xAs (x=0.22) Layer Grown by Metalorganic Chemical Vapor Deposition
MRS - Materials Research Society |
Electrochemical Society |
SPIE-The International Society for Optical Engineering |