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Depth inhomogeneity of ZnTe,CdZnTe,ZnSe epilayers grown on(001)GaAS of MBE

著者名:
Venger,E.F. ( Institute of Semiconductor Physics )
Sadof'ev,Yu.G.
Semenova,G.N.
Korsunskaya,N.E.
Klad'ko,V.P.
Embergenov,B.
Dzhumaev,B.R.
Borkovskaya,L.V.
Semtsiv,M.P.
Sharibaev,M.
さらに 5 件
掲載資料名:
Fourth International Conference on Material science and material properties for infrared optoelectronics : 29 September-2 October 1998, Kiev, Ukraine
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
3890
発行年:
1999
開始ページ:
170
終了ページ:
176
出版情報:
Bellingham, Washington: SPIE - The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819434913 [0819434914]
言語:
英語
請求記号:
P63600/3890
資料種別:
国際会議録

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