From radiation induced leakage current to soft breakdown in irradiated MOS devices with ultrathin gate oxide

From radiation induced leakage current to soft breakdown in irradiated MOS devices with ultrathin gate oxide

著者名:

掲載資料名:

Structure and electronic properties of ultrathin dielectric films on silicon and related structures : symposium held November 29-December 1, 1999, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

592

発行年:

2000

開始ページ:

201

出版情報:

Warrendale, PA: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558995000 [1558995005]

言語:

英語

請求記号:

M23500/592

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020837
シリーズID:	PA00000011
会議名:	Structure and Electronic Properties of Ultrathin Dielectric Films on Silicon and Related Structures : Symposium
回次:	1999
会議開催地:	Boston, MA, USA
会議開催年:	1999.11.29-1999.12.01

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