Correlation between development of leakage current and hydrogen ionization in ultrathin silicon dioxide layers

Correlation between development of leakage current and hydrogen ionization in ultrathin silicon dioxide layers

著者名:

掲載資料名:

Structure and electronic properties of ultrathin dielectric films on silicon and related structures : symposium held November 29-December 1, 1999, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

592

発行年:

2000

開始ページ:

195

出版情報:

Warrendale, PA: MRS-Materials Research Society

ISSN:

02729172

ISBN:

9781558995000 [1558995005]

言語:

英語

請求記号:

M23500/592

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020837
シリーズID:	PA00000011
会議名:	Structure and Electronic Properties of Ultrathin Dielectric Films on Silicon and Related Structures : Symposium
回次:	1999
会議開催地:	Boston, MA, USA
会議開催年:	1999.11.29-1999.12.01

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