Comparison in the growth and properties of RF sputtered ヲフc-Si:H and glow discharge-chemical vapor deposited ヲフc-Si:H films
- 著者名:
- 掲載資料名:
- Crystallization and related phenomena in amorphous materials : symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 321
- 発行年:
- 1994
- 開始ページ:
- 731
- 出版情報:
- Pittsburgh, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558992207 [1558992200]
- 言語:
- 英語
- 請求記号:
- M23500/321
- 資料種別:
- 国際会議録
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12
国際会議録
IMPROVED STABILITY OF RF GLOW DISCHARGE DEPOSITED a-Si:H ACHIEVED BY HYDROGEN DILUTION OF SILANE
Materials Research Society |