DX centers in AlGaAs and pressurised GaAs

DX centers in AlGaAs and pressurised GaAs

著者名:

掲載資料名:

III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

300

発行年:

1993

開始ページ:

489

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558991965 [1558991964]

言語:

英語

請求記号:

M23500/300

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020790
シリーズID:	PA00000011
会議名:	Symposium on electronic and photonic device fabrication and performance
回次:	1993
会議開催地:	San Francisco, CA, USA
会議開催年:	1993.04.12-1993.04.15

類似資料:

1 国際会議録 TRAPPING CHARACTERISTICS OF THE DUAL STATES OF THE DX CENTER IN MBE GROWN Si DOPED AlGaAs. SUBRAMANIAN,S., ARORA,B.M., MOHAPATRA,Y.N., KUMAR,V. Trans Tech Publications	7 国際会議録 Study of PPC in AlGaAs/GaAs Heterostructures.Discovery of an Excited State of the DX Center at 0.65 eV. Spector,M., Pfeiffer,L.N., Licini,J.C., West,K.W., Baraff,G.A. Trans Tech Publications
2 国際会議録 ON THE ORIGIN OF MULTIPLE PEAKS IN THE DEEP LEVEL ADMITTANCE SPECTROSCOPY OF DX CENTERS IN AGaAs:Sn Chakravarty, S., Subramanian, S., Arora, B. M. Materials Research Society	8 国際会議録 DX Centers versus Shanow D- Centers in AlGaAs Based Quantum Wells Huant,S., Mandray,A., Martinez,G., Etienne,B. Trans Tech Publications
3 国際会議録 Shallow states of DX centres in AlGaAs:Sn probed by admittance spectroscopy Chakravarty,S, Subramanian,S, Arora,BM Trans Tech Publications	9 国際会議録 LATTICE RELAXATION OF THE DX CENTERS IN Ga1-XAlXAs AND OF THE PRESSURE-INDUCED DEEP DONORS IN GaAs Li, M. F., Shan, W., Yu, P. Y., Hansen, W. L., Weber, E. R., Bauser, E. Materials Research Society
4 国際会議録 Dissociation kinetics of hydrogen-neutralized Si donors and DX centers in AlGaAs Roos,G., Johnson,N.M., Herring,C., Harris,J.S. Trans Tech Publications	10 国際会議録 C-V and DLTS investigations of GaAs/InGaAs/GaAs strained quantum well structures Subramanian, S., Arora, B. M., Srivastava, A. K., Banerjee, S., Fernandes, G. MRS - Materials Research Society
5 国際会議録 Surface Photovoltage Spectroscopy of AlGaAs/GaAs Heterojunction in the Range Above the Bandgap of AlGaAs Kumar,Shailendra, Bhattacharya,P., Roy,U.N., Chandvankar,S., Arora,B.M. SPIE - The International Society for Optical Engineering	11 国際会議録 EFFECT OF THE HOST BAND STRUCTURE ON CAPTURE AND EMISSION PROCESSES AT DX CENTERS IN AlGaAs. MOONEY,P.M., CALLEJA,E., WRIGHT,S.L., HEIBLUM,M. Trans Tech Publications
6 国際会議録 Hole Capture by the DX Center in AlGaAs Schottky Barriers Mosca,R., Gombia,E., Ghezzi,C., Frigeri,P., Bosacchi,A., Franchi,S. Trans Tech Publications	12 国際会議録 DX CENTER IN GaAs-GaA1As SUPERLATTICES SUPPRESSION AND IDENTIFICATION Feng, S. L., Bourgoin, J. C., Bardeleben, von H. J., Barbier, E., Hirtz, J. P., Mollot, F. Materials Research Society

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