Selective area epitaxy for optoelectronic devices

Selective area epitaxy for optoelectronic devices

著者名:

Temkin, H.

掲載資料名:

III-V electronic and photonic device fabrication and performance : symposium held April 12-15, 1993, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

300

発行年:

1993

開始ページ:

89

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558991965 [1558991964]

言語:

英語

請求記号:

M23500/300

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020790
シリーズID:	PA00000011
会議名:	Symposium on electronic and photonic device fabrication and performance
回次:	1993
会議開催地:	San Francisco, CA, USA
会議開催年:	1993.04.12-1993.04.15

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1 国際会議録 TEMPERATURE DEPENDENCE OF MORPHOLOGY OF InP FILMS GROWN BY METALORGANIC MOLECULAR BEAM EPITAXY Cotta, M. A., Hamm, R. A., Chu, S. N. G., Harriott, L. R., Temkin, H. MRS - Materials Research Society	7 国際会議録 DEEP STRUCTURES PRODUCED IN III-V MATERIALS BY COMBINED FOCUSED ION BEAM IRRADIATION AND DRY ETCHING Harriott, L.R., Wang, Y.L., Chin, B.H., Temkin, H. Materials Research Society
2 国際会議録 EVOLUTION OF ROUGHNESS ON InP LAYERS OBSERVED BY SCANNING FORCE MICROSCOPY Cotta, M. A., Hamm, R. A., Chu, S. N. G., Staley, T. W., Harriott, L. R., Panish, M. B., Temkin, H. MRS - Materials Research Society	8 国際会議録 DYNAMICAL X-RAY DIFFRACTION STUDIES OF INTERFACIAL STRAIN IN SUPERLATTICES GROWN BY MOLECULAR BEAM EPITAXY Vanderberg, J. M., Chu, S. N. G., Hamm, R. A., Panish, M. B., Ritter, D., Mancrander, A. T. Materials Research Society
3 国際会議録 *HIGH QUALITY EPITAXIAL GROWTH ON IN-SITU PATTERNED InP SUBSTRATE Temkin, H., Harriott, L. R., Weiner, J., Hamm, R. A., Panish, M. B. Materials Research Society	9 国際会議録 *ELECTRICAL PROPERTIES OF Si/SiGe STRUCTURES GROWN BY LOW TEMPERATURE EPITAXY Temkin, H., Green, M. L., Brasen, D., Bean. J. C. Materials Research Society
4 国際会議録 Integrated optoelectronic devices by selective-area epitaxy Jones,A.M., Coleman,J.J. SPIE-The International Society for Optical Engineering	10 国際会議録 Temperature -dependent X-ray study of alloyed gold metallization contacts on In1_xGaxAsyP1_y/InP layers Vandenberg, J., Temkin, H., Hamm, R. A., DiGuiseppe, M. A. North-Holland
5 国際会議録 Laser devices by selective-area epitaxy Lammert,R.M., Coleman,J.J. SPIE-The International Society for Optical Engineering	11 国際会議録 Fabrication of Reduced Area InGaAs/InP HBT and DHBT Devices Kopf, R.E., Wang, Y.-C., Hamm, R.A., Ryan, R.W, Tate, A., Melendes, M.A., Pullela, R., Georgiou, G., Mattia, J.-P., … Electrochemical Society
6 国際会議録 LASER SELECTIVE AREA EPITAXY FOR THE POTENTIAL OF OPTOELECTRONIC INTEGRATION Liu, H., Roberts, J.C., Ramdani, J., Bedair, S.M. Materials Research Society	12 国際会議録 Vacuum Layer Epitaxy - An Approach to Controlled Selective Area Epitaxy Jow, M.Y., MacDougal, M.H., Frateschi, N.C., Maa, B.Y., Dapkus, P.D., Morishita, T. Electrochemical Society

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