Ostwald Ripening of {113} Defects Precursors and Transient Enhanced Diffusion | 東京工業大学附属図書館文献データベース

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Ostwald Ripening of {113} Defects Precursors and Transient Enhanced Diffusion

著者名:

Cowern, N. E. B.

Huizing, H. G. A.

Berkum, J. G. M. van

さらに 5 件

掲載資料名:

Si front-end processing - physics and technology of dopant-defect interactions : symposium held April 6-9, 1999, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

568

発行年:

1999

開始ページ:

163

出版情報:

Warrendale, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558994751 [1558994750]

言語:

英語

請求記号:

M23500/568

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020789
シリーズID:	PA00000011
会議名:	Symposium on si front-end processing-physics and technology of dopant-defect interactions
回次:	1999
会議開催地:	San Francisco, CA, USA
会議開催年:	1999.04.06-1999.04.09

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1 国際会議録 Transient Enhanced Diffusion and Ostwald Ripening of Ion-Implantation Generated Defects in Silicon Cowern, N.E.B., Mannino, G., Roozeboom, F., Stalk, P.A., Huizing, H.G.A., van Berkum, J.G.M, Toan, N.N., Woerlee, P.H., … Electrochemical Society	7 国際会議録 10 Relation between thermal evolution of interstitial defects and Transient Enhanced Diffusion in silicon Claverie, A., Cristiano, F., Colombeau, B., Hebras, X., Calvo, P., Cherkoshin, N., Larnrani, Y., Scheid, E., de Mauduit, … Electrochemical Society
2 国際会議録 Role of Silicon and Boron Interstitial Clusters in Transient Enhanced Diffusion Cowern, N.E.B., Mannino, G., Roozeboom, F., van Berkum, J.G.M, Colombeau, B., Claverie, A. Electrochemical Society	8 国際会議録 Atomistic Simulations of Extrinsic Defects Evolution and Transient Enhanced Diffusion in Silicon Claverie, A., Colombeau, B., Cristiano, F., Altibelli, A., Bonafos, C. Materials Research Society
3 国際会議録 The Effect of Oxygen on the Electrical Activation and Diffusion of Ion-Implanted Boron Larsen, K. Kyllesbech, Stolk, P. A., Privitera, V., Berkum, J. G. M. van, Boer, W. B. de, Mannino, G., Cowern, N. E. B., … MRS - Materials Research Society	9 国際会議録 On the ｢紜symmetrical｢？Behavior of Transient Enhanced Diffusion in Pre-Amorphized Si Wafers Alquier, D., Cowern, N. E. B., Pichler, P., Armand, C., Martinez, A., Mathiot, D., Omri, M., Claverie, A. MRS - Materials Research Society
4 国際会議録 Low-Energy Implantation and Transient-Enhanced Diffusion: Physical Mechanisms and Technology Implications Cowern, N. E. B., Collart, E. J. H., Politiek, J., Bancken, P. H. L., Berkum, J. G. M. van, Larsen, K. Kyllesbech, … MRS - Materials Research Society	10 国際会議録 Experimental study on the mechanism of carbon diffusion in silicon Cowern, N.E.B., Colombeau, B., Roozeboom, F., Hopstaken, M., Snijders, H., Meunier-Beillard, P., Lerch, W. Materials Research Society
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