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Effect of Hydrogen Chloride on the Capacitance-Voltage Characteristics of MOCVD-Grown AlN/6H-SiC MIS Structures

著者名:
掲載資料名:
Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
468
発行年:
1997
開始ページ:
475
出版情報:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993723 [155899372X]
言語:
英語
請求記号:
M23500/468
資料種別:
国際会議録

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