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Etch Characteristics of GaN Using Inductively-Coupled Cl2/HBr and Cl2/Ar Plasmas

著者名:
Kim, H. S.
Lee, Y. J.
Lee, Y. H.
Lee, J. W.
Yoo, M. C.
Kim, T. I.
Yeom, G. Y.
さらに 2 件
掲載資料名:
Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
468
発行年:
1997
開始ページ:
367
出版情報:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993723 [155899372X]
言語:
英語
請求記号:
M23500/468
資料種別:
国際会議録

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