Patterning of GaN in High-Density Cl2- and BCl3-Based Plasmas | 東京工業大学附属図書館文献データベース

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Patterning of GaN in High-Density Cl2- and BCl3-Based Plasmas

著者名:

Ludowise, M. J.

さらに 3 件

掲載資料名:

Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

468

発行年:

1997

開始ページ:

355

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993723 [155899372X]

言語:

英語

請求記号:

M23500/468

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020780
シリーズID:	PA00000011
会議名:	Symposium on gallium nitride and related materials
回次:	2nd
会議開催地:	San Francisco, CA, USA
会議開催年:	1997.04.01-1997.04.04

類似資料:

1 国際会議録 GaN Etching in BCl3/Cl2 Plasmas Shul, R. J., Ashby, C. I. H., Willison, C. G., Zhang, L., Han, J., Bridges, M. M., Pearton, S. J., Lee, J. W., Lester, … MRS - Materials Research Society	7 国際会議録 Plasma Chemistry Dependent ECR Etching of GaN Shul, R. J., Ashby, C. I. H., Rieger, D. J., Howard, A. J., Pearton, S. J., Abernathy, C. R., Vartuli, C. B., Barnes, P. … MRS - Materials Research Society
2 国際会議録 Chlorine-Based Plasma Etching of GaN Shul, R. J., Briggs, R. D., Pearton, S. J., Vartuli, C. B., Abernathy, C. R., Lee, J. W., Constantine, C., Barratt, C. MRS - Materials Research Society	8 国際会議録 Group-III Nitride Etch Selectivity in BCl3/Cl2 ICP Plasmas Shul, R. J., Zhang, L., Willison, C. G., Han, J., Pearton, S. J., Hong, J., Abernathy, C. R., Lester, L. F. MRS - Materials Research Society
3 国際会議録 High Rate Dry Etching of GaN, AIN and InN in ECR Cl2/CH4/H2/Ar Plasmas Vartuli, C. B., Pearton, S. J., Abernathy, C. R., Shul, R. J., Kilcoyne, S. P., Crawford, M. Hagerott, Howard, A. J., … MRS - Materials Research Society	9 国際会議録 Plasma-Induced-Damage of GaN Shul, R.J., Zolper, J.C., Hagerott Crawford, M., Hickamn, R.J., Briggs, R.D., Pearton, S.J., Lee, J.W., Karlicek, R.F., … Electrochemical Society
4 国際会議録 Cl2-Based Dry Etching of the AlGalnN System in Inductively-Coupled Plasmas Cho, Hyun, Vartuli, C. B., Abernathy, C. R., Donovan, S. M., Pearton, S. J., Shul, R. J., Han, J. MRS - Materials Research Society	10 国際会議録 High-density plasma-induced etch damage of GaN Shul, R.J., Zhang, L., Baca, A.G., Willison, C.G., Han, J., Pearton, S.J., Ren, F., Zolper, J.C., Lester, L.F. Materials Research Society
5 国際会議録 Plasma Chemistries for Dry Etching GaN, AlN, InGaN and InAlN Pearton, S. J., Vartuli, C. B., Lee, J. W., Donovan, S. M., MacKenzie, J. D., Abernathy, C. R., Shul, R. J., McLane, G. … MRS - Materials Research Society	11 国際会議録 Hydrogenation and Defect Creation in GaAs-Based Devices During High-Density Plasma Processing Maeda, T., Lee, J. W., Abernathy, C. R., Pearton, S. J., Ren, F., Constantine, C., Shul, R. J. MRS - Materials Research Society
6 国際会議録 Inductively Coupled High-Density Plasma-Induced Etch Damage Of GaN MESFETs Shul, Randy J., Zhang, L., Baca, A.G., Willison, Christi G., Hans, J., Pearton, S.J., Lee, K.P., Ren, F. Materials Research Society	12 国際会議録 The Role of Plasma Chemistry and Ion Density in Dry Etching of Nitrides Vartuli, C.B., Pearton, S.J., Abernathy, C.R., Shul, R.J., Ren, F. Electrochemical Society

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