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Characterization of AlxGa1-xN Films Prepared by Plasma-Induced Molecular-Beam Epitaxy on c-Plane Sapphire

著者名:
Angerer, H.
Ambacher, O.
Stutzmann, M.
Metzger, T.
Hopler, R.
Born, E.
Bergmaier, A.
Dollinger, G.
さらに 3 件
掲載資料名:
Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
468
発行年:
1997
開始ページ:
305
出版情報:
Pittsburgh, Pa.: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993723 [155899372X]
言語:
英語
請求記号:
M23500/468
資料種別:
国際会議録

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