High-Pressure Raman Scattering of Biaxially Strained GaN on GaAs
- 著者名:
Siegle, H. Goni, A. R. Thomsen, C. Ulrich, C. Syassen, K. Schottker, B. As, D. J. Schikora, D. - 掲載資料名:
- Gallium nitride and related materials II : symposium held April 1-4, 1997, San Francisco, California, U.S.A.
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 468
- 発行年:
- 1997
- 開始ページ:
- 225
- 出版情報:
- Pittsburgh, Pa.: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558993723 [155899372X]
- 言語:
- 英語
- 請求記号:
- M23500/468
- 資料種別:
- 国際会議録
類似資料:
Trans Tech Publications |
MRS - Materials Research Society |
2
国際会議録
Depth-Resolved and Excitation Power Dependent Cathodo-luminescence of MBE-Grown Cubic GaN Epilayers
MRS - Materials Research Society |
MRS - Materials Research Society |
Trans Tech Publications |
9
国際会議録
An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
MRS - Materials Research Society |
MRS - Materials Research Society |
MRS-Materials Research Society |
Trans Tech Publications |