A STUDY OF LOOP EVOLUTION DURING INERT AMBIENT ANNEALING AND REACTION BETWEEN POINT DEFECTS AND DISLOCATION LOOPS DURING OXIDATION OF SILICON

A STUDY OF LOOP EVOLUTION DURING INERT AMBIENT ANNEALING AND REACTION BETWEEN POINT DEFECTS AND DISLOCATION LOOPS DURING OXIDATION OF SILICON

著者名:

掲載資料名:

Beam-solid interactions for materials synthesis and characterization : symposium held November 28-December 2, 1994, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

354

発行年:

1995

開始ページ:

293

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992559 [1558992553]

言語:

英語

請求記号:

M23500/354

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020770
シリーズID:	PA00000011
会議名:	Symposium on beam-solid interactions for materials synthesis and characterization
回次:	1994
会議開催地:	Boston, MA, USA
会議開催年:	1994.11.28-1994.12.02

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1 国際会議録 USING OZIDATION TO STUDY THE REACTION BETWEEN POINT DEFFECTS AND DISLOCATION LOOPS Meng, H.L., Chen, J., Robinson, H.G., Law, M.E., Slinkman, J.A., Jones, K.S. Electrochemical Society	7 国際会議録 SILICON MEMBRAN STUDIES OF POINT DEFECT TRANSPORT KINETICS DURING THERMAL OXIDATION Ahn, S.T., Shott, J.D., Tiller, W.A. Materials Research Society
2 国際会議録 Enhanced Dissolution of Extrinsic Dislocation Loops in Silicon Annealed in NH3 Herner, S. B., Krishnamoorthy, V., Jones, K. S., Mogi, T. K., Gossmann, H-J. MRS - Materials Research Society	8 国際会議録 POINT DEFECT DETECTOR STUDIES OF OXIDIZED SILICON Meng, H. L., Jones, K. S., Prussin, S. Materials Research Society
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