Nitride-Based Emitters on SiC Substrates

Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997

シリーズ名:

Materials science forum

シリーズ巻号:

264-268

発行年:

1998

巻:

Part2

開始ページ:

1421

終了ページ:

1424

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497928 [0878497927]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020694
シリーズID:	PA00000012
会議名:	ICSCIII-N : International Conference on Silicon Carbide, III-Nitrides Related Materials
回次:	1997 : 7th
会議開催地:	Stockholm, Sweden
会議開催年:	1997.09.00

類似資料:

1 国際会議録 Status of Nitride-Based Light-Emitting and Laser Diodes on SiC Doverspike, K., Bulman, G. E., Sheppard, S. T., Kong, H. S., Leonard, M., Dieringer, H., Weeks, T. W., Jr., Edmond, J., … MRS - Materials Research Society	7 国際会議録 AlGaN/GaN/AlGaN Double-Heterojunction Blue LEDs on 6H-SiC Substrates Kong, Hua-Shuang, Leonard, Michelle, Bulman, Gary, Negley, Gerry, Edmond, John MRS - Materials Research Society
2 国際会議録 The First Nitride Laser Diode on Silicon Carbide Brown, J. D., Swindell, J. T., Johnson, M. A. L., Yu, Zhonghai, Schetzina, J. F., Bulman, G. E., Doverspike, K., … MRS - Materials Research Society	8 国際会議録 Recent progress in AIGaN/GaN laser structures on 6H-SiC Bulman,G.E., Edmond,J.A., Dmitriev,V.A., Kong,H.-S., Leonard,M.T., Irvine,K.G., Nikolaev,V.I., Zubrilov,A.S., … SPIE-The International Society for Optical Engineering
3 国際会議録 InGaN/GaN lasers grown on SiC (Invited Paper) Doverspike,K., Bulman,G.E., Sheppard,S.T., Kong,H.S., Leonard,M.T., Dieringer,H., Edmond,J.A., More,K.L., Song,Y.-K., … SPIE-The International Society for Optical Engineering	9 国際会議録 MBE Growth of III-V Nitride Films and Quantum-Well Structures Using Multiple rf Plasma Sources Johnson, M. A. L., Yu, Zhonghai, Boney, C., Rowland, W. H., Jr., Hughes, W. C., Cook, J. W., Jr., Schetzina, J. F., … MRS - Materials Research Society
4 国際会議録 Nitride-based emitters on SiC substrates Edmond,J.A., Kong,H.-S., Leonard,M.T., Doverspike,K., Bulman,G.E., Weeks,W., Irvine,K.G., Dmitriev,V.A. SPIE-The International Society for Optical Engineering	10 国際会議録 GaN homojunction and AlGaN/GaN heterojunction visible-blind photodiodes grown on SiC Bulman,G.E., Kong,H.S., Leonard,M.T. SPIE - The International Society for Optical Engineering
5 国際会議録 InGaN/GaN MQW SCH lasers grown on SiC Bulman,G.E., Doverspike,K., Haberern,K.W., Dieringer,H., Kong,H.S., Edmond,J.A., Song,Y.-K., Kuball,M., Nurmikko,A.V. SPIE - The International Society for Optical Engineering	11 国際会議録 A Critical Comparison Between MOVPE and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device Applications Johnson, M. A. L., Yu, Z., Brown, J. D., Koeck, F. A., El-Masry, N. A., Kong, H. S., Edmond, J. A., Cook, J. W., Jr., … MRS - Materials Research Society
6 国際会議録 Pendeoepitaxy of GaN and In GaN LEDs on SiC Kong, H. S., Edmond, J., Doverspike, K., Emerson, D., Bulman, G., Haberern, K., Dieringer, H., Slater, D. Trans Tech Publications	12 国際会議録 Improved 10-GHz Operation of GaN/AlGaN HEMTs on Silicon Carbide Sheppard, S. T., Doverspike, K., Leonard, M., Pribble, W. L., Allen, S. T., Palmour, J. W. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12