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On the Interpretation of High-Frequency Capacitance Data of SiC MOS Structures:The Effect of Thermal Non-Equilibrium

著者名:
掲載資料名:
Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997
シリーズ名:
Materials science forum
シリーズ巻号:
264-268
発行年:
1998
巻:
Part2
開始ページ:
981
終了ページ:
984
出版情報:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497928 [0878497927]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

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