Comparison of SiO2 and AIN as Gate Dielectric for SiC MOS Structures

Comparison of SiO2 and AIN as Gate Dielectric for SiC MOS Structures

著者名:

Zetterling,C.-M.

掲載資料名:

Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997

シリーズ名:

Materials science forum

シリーズ巻号:

264-268

発行年:

1998

巻:

Part2

開始ページ:

877

終了ページ:

880

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497928 [0878497927]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020694
シリーズID:	PA00000012
会議名:	ICSCIII-N : International Conference on Silicon Carbide, III-Nitrides Related Materials
回次:	1997 : 7th
会議開催地:	Stockholm, Sweden
会議開催年:	1997.09.00

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