Deuterium Incorporation in Acceptor Doped Epitaxial Layers of 6H-SiC

Deuterium Incorporation in Acceptor Doped Epitaxial Layers of 6H-SiC

著者名:

Linnarsson,M.K.

掲載資料名:

Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997

シリーズ名:

Materials science forum

シリーズ巻号:

264-268

発行年:

1998

巻:

Part2

開始ページ:

761

終了ページ:

764

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497928 [0878497927]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020694
シリーズID:	PA00000012
会議名:	ICSCIII-N : International Conference on Silicon Carbide, III-Nitrides Related Materials
回次:	1997 : 7th
会議開催地:	Stockholm, Sweden
会議開催年:	1997.09.00

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1 国際会議録 Metal-Contact Enhanced Incorporation of Deuterium in 4H- and 6H-SiC Linnarsson, M. K., Spetz, A. Ll., Janson, M. S., Ekedahl, L. G., Karlsson, S., Schoner, A., Lundstrom, I., Svensson, B. … Trans Tech Publications	7 国際会議録 Dissociation of Deuterium-Defect Complexes in Ion-Implanted Epitaxial 4H-SiC Janson, M., Linnarsson, M. K., Hallen, A., Svensson, B. G. MRS - Materials Research Society
2 国際会議録 Dissociation Energy of the Passivating Hydrogen-Aluminum Complex in 4H-SiC Janson, M.S, Hallen, A., Linnarsson, M.K., Nordell, N., Karlsson, S., Svensson, B.G. Trans Tech Publications	8 国際会議録 Boron Diffusion in Intrinsic, n-Type and p-Type 4H-SiC Linnarsson, M.K., Janson, M.S., Shoner, A., Konstantinov, A., Svensson, B.G. Trans Tech Publications
3 国際会議録 Precipitate Formation in Heavily Al-Doped 4H-SiC Layers Linnarsson, M.K., Persson, P.O.A., Bleichner, H., Janson, M., Zimmermann, U., Andersson, H., Karlsson, S., Yakimova, R., … Trans Tech Publications	9 国際会議録 Growth of δ-Doped SiC Epitaxial Layers Karlsson, S., Adas, C., Konstantinov, A., Linnarsson, M.K. Trans Tech Publications
4 国際会議録 Incorporation of Hydrogen (1H and 2H) into 4H-SiC during Epitaxial Growth Linnarsson, M.K., Forsberg, U., Janson, M.S., Janzen, E., Svensson, B.G. Trans Tech Publications	10 国際会議録 Characterization of Deep Level Defects in 4H and 6H SiC Via DLTS, SIMS and MeV E-Beam Irradiation Doyle, J. P., Aboelfotoh, M. O., Linnarsson, M. K., Svensson, B. G., Schoner, A., Nordell, N., Harris, C., Lindstrom, J. … MRS - Materials Research Society
5 国際会議録 Aluminum and Boron Diffusion in 4H-SiC Linnarsson, M.K., Janson, M.S., Schoner, A., Svensson, B.G. Materials Research Society	11 国際会議録 Range Distributions of Implanted Ions in Silicon Carbide Janson, M.S., Linnarsson, M.K., Hallen, A., Svensson, B.G. Trans Tech Publications
6 国際会議録 Incorporation of Hydrogen (1H and 2H) into 4H-SiC during Epitaxial Growth Linnarsson, M.K., Forsberg, U., Janson, M., Janzen, E., Svensson, B.G. Trans Tech Publications	12 国際会議録 Range Distributions of Implanted Ions in Silicon Carbide Janson, M.S., Linnarsson, M.K., Hallen, A., Svensson, B.G. Trans Tech Publications

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