Analysis of Aluminum Ion Implantation Damage into 6H-SiC Epilayers

Analysis of Aluminum Ion Implantation Damage into 6H-SiC Epilayers

著者名:

Mestres,N.

掲載資料名:

Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997

シリーズ名:

Materials science forum

シリーズ巻号:

264-268

発行年:

1998

巻:

Part2

開始ページ:

733

終了ページ:

736

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497928 [0878497927]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020694
シリーズID:	PA00000012
会議名:	ICSCIII-N : International Conference on Silicon Carbide, III-Nitrides Related Materials
回次:	1997 : 7th
会議開催地:	Stockholm, Sweden
会議開催年:	1997.09.00

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2 国際会議録 Damage Reduction in Channeled Ion Implanted 6H-SiC Morvan, E., Mestres, N., Campos, F. J., Pascual, J., Anders, Hallen, Linnarsson, M. K., Kuznetsov, A. Yu. Trans Tech Publications	8 国際会議録 Energy Order Effect of Aluminum Multiple Implantation in 6H-SiC Ottaviani,L., Morvan,E., Locatelli,M.L., Godignon,P., Chante,J.P. Trans Tech Publications
3 国際会議録 Infrared Investigation of Implantation Damage in 6H-SiC Camassel, J., Wang, H., Pernot, J., Godignon, P., Mestres, N., Pascual, J. Trans Tech Publications	9 国際会議録 4H-SiC MOSFETs Using Thermal Oxidized Ta2Si Films as High-k Gate Dielectric Perez-Tomas, A., Godignon, P., Mestres, N., Montserrat, J., Millan, J. Trans Tech Publications
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