Arsenic Antisite-Arsenic Vacancy Complex and Gauium Vacancy in GaAs:A Kind of Bistability Pair of Intrinsic Defects?
- 著者名:
- 掲載資料名:
- Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995
- シリーズ名:
- Materials science forum
- シリーズ巻号:
- 196-201
- 発行年:
- 1995
- パート:
- 2
- 開始ページ:
- 1061
- 終了ページ:
- 1066
- 出版情報:
- Zurich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878497164 [0878497161]
- 言語:
- 英語
- 請求記号:
- M23650
- 資料種別:
- 国際会議録
類似資料:
Trans Tech Publications | |
2
国際会議録
The isolated arsenic antisite defect and EL2-an ODMR investigation of electron irradiated GaAs
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |
Trans Tech Publications |
MRS - Materials Research Society |
Trans Tech Publications |
MRS - Materials Research Society |