Blank Cover Image

DONOR IDENTIFICATION IN BULK GALLIUM ARSENIDE.

著者名:
掲載資料名:
Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986
シリーズ名:
Materials science forum
シリーズ巻号:
10-12
発行年:
1986
巻:
Part3
開始ページ:
1219
終了ページ:
1222
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878495511 [0878495517]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 Free Electrons and Resonant Donor State in Gallium Nitride

Perlin,P., Suski,T., Teisseyre,H., Leszczynski,M., Grzegory,I., Jun,J., Bockowski,M., Porowski,S., Boguslawski,P., …

Trans Tech Publications
7 国際会議録 ASSESSMENT OF SURFACE DAMAGE OF GALLIUM ARSENIDE DUE TO REACTIVE ION ETCHING

Puttock, M. S., Thomas, H., Morgan, D. V., Rossow, U., Zahn, D. R. T., Richter, W., Hilton, K. P., Woodward, J.

Materials Research Society
2 国際会議録 BURIED AMORPHOUS LAYER IN GALLIUM ARSENIDE

Sengupta, D., Ridgway, M.C., Zemanski, J.M., Johnson, S.T.

Materials Research Society
8 国際会議録 Development of Coated Gallium Arsenide Neutron Detectors

R. T. Klann, D. S. McGregor

American Society of Mechanical Engineers
3 国際会議録 Growth of Indium Phosphide/Indium Gallium Arsenide Structures by MOCVD Using an Atmosphere Pressure Reactor

Bass J. S., Barnett J. S., Brown T. G., Chew G. N., Cullis G. A., Skolnick S. M., Taylor L. L.

Plenum Press
9 テクニカルペーパー COMPUTER MODELLING OF ALUMINUM-GALLIUM ARSENIDE/GALLIUM ARSENIDE MULTILAYER PHOTOVOLTAICS

Thesis, M.S.

National Aeronautics and Space Administration
4 国際会議録 GROWTH OF GALLIUM ARSENIDE ON SILICON IN MASKED, ETCHED TRENCHES

Adkisson, J.W., Kamins, T.I., Koch, G.M., Harris, Jr., J.S., Rosner, S.J., Nauka, K., Reid, G.A.

Materials Research Society
10 国際会議録 OPTICALLY-INDUCED, ROOM-TEMPERATURE OXIDATION OF GALLIUM ARSENIDE

Yu, C-F., Schmidt, M.T., Podlesnik, D.V., Osgood, Jr., R.M.

Materials Research Society
5 国際会議録 Positron Mobility in Gallium Arsenide

Au,H.L., Ling,C.C., Lee,T.C., Beling,C.D., Fung,S.

Trans Tech Publications
11 国際会議録 Optical spectroscopic determination of the electronic band structure of bulk AlGaInP and GaInP-AlGaInP heterojunction band offsets

Mowbray,D.J., Kowalski,O.P., Cockburn,J.W., Skolnick,M.S., Hopkinson,M., David,J.P.R.

SPIE-The International Society for Optical Engineering
6 国際会議録 *IDENTIFICATION OF IMPURITIES AND DEFECTS IN SEMICONDUCTORS BY OPTICAL SPECTROSCOPY

Skolnick, M. S.

Materials Research Society
12 国際会議録 MICROSCOPIC MORPHOLOGY OF GALLIUM CLUSTERS ON GaAs(001)

Lowes, T.D., Zinke-Allmang, M.

Materials Research Society
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12