Blank Cover Image

ON THE INFLUENCE OF DOPING AND ANNEALING ON OXYGEN-RELATED DEFECTS IN SILICON.

著者名:
掲載資料名:
Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986
シリーズ名:
Materials science forum
シリーズ巻号:
10-12
発行年:
1986
巻:
Part3
開始ページ:
869
終了ページ:
874
出版情報:
Aedermannsdorf, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878495511 [0878495517]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

Dannefaer, S., Mascher, P., Kerr, D.

Materials Research Society

Bretagnon,T., Dannefaer,S., Kerr,D.

Trans Tech Publications

Puff,W., Mascher,P., Kerr,D., Dannefaer,S.

Trans Tech Publications

Dannefaer,S., Wiebe,C., Kerr,D.

Trans Tech Publications

Mascher,P., Dannefaer,S., Kerr,D.

Trans Tech Publications

Mascher, P., Puff, W., Hahn, S., Cho. K. H., Lee, B. Y.

Materials Research Society

Dannefaer, S., Kerr, D.

Materials Research Society

Puff,W., Mascher,P., Hahn,S., Cho,K.H., Lee,B.Y.

Trans Tech Publications

Dannefaer, S., Bretagnon, T., Abdurahman, K., Kerr, D., Hahn, S.

Materials Research Society

Mascher,P., Puff,W., Hahn,S., Cho,K.H., Lee,B.Y.

Trans Tech Publications

Dannefaer,S., Mascher,P., Kerr,D.

Trans Tech Publications

Porrini, M., Gambaro, D., Geranzani, P., Falster, R.

Electrochemical Society

1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12