Band structure of interdiffused InGaN/GaN quantum wells

Band structure of interdiffused InGaN/GaN quantum wells

著者名:

Cheung,E.M.T. ( Univ.of Hong Kong )
Chan,M.C.Y. ( Univ.of Hong Kong )
Li,E.H. ( Univ.of Hong Kong )

掲載資料名:

Optoelectronic Materials and Devices

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3419

発行年:

1998

開始ページ:

317

終了ページ:

324

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819428738 [0819428736]

言語:

英語

請求記号:

P63600/3419

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020634
シリーズID:	PA00000029
会議名:	Asia Pacific Symposium on Optoelectronics : Optoelectronic Materials and Devices
回次:	1998
会議開催地:	Taipei, Taiwan
会議開催年:	1998.07.09-1998.07.11

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