Homoepitaxial growth of InGaN/GaN double-heterostructure light-emitting diode by low-pressure MOCVD

Homoepitaxial growth of InGaN/GaN double-heterostructure light-emitting diode by low-pressure MOCVD

著者名:

Choi,Y.H. ( LG Corporate Institute of Technology (Korea) )

Kim,S.W. ( LG Corporate Institute of Technology (Korea) )

Yi,J.H. ( LG Corporate Institute of Technology (Korea) )

Yoo,T.-K ( LG Corporate Institute of Technology (Korea) )

Hong,C.H. ( Chonbuk National Univ.(Korea) )

Kim,S.T. ( Taejon National Univ.of Technology (Korea) )

さらに 1 件

掲載資料名:

Optoelectronic Materials and Devices

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3419

発行年:

1998

開始ページ:

16

終了ページ:

19

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819428738 [0819428736]

言語:

英語

請求記号:

P63600/3419

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020634
シリーズID:	PA00000029
会議名:	Asia Pacific Symposium on Optoelectronics : Optoelectronic Materials and Devices
回次:	1998
会議開催地:	Taipei, Taiwan
会議開催年:	1998.07.09-1998.07.11

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