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Epitaxial lateral overgrowth of GaN by the sublimation method and by MOCVD

著者名:
Wang,J. ( Univ.of Tokushima (Japan) )
Tottori,S. ( Univ.of Tokushima (Japan) )
Hao,M.S. ( Univ.of Tokushima (Japan) )
Sato,H. ( Univ.of Tokushima (Japan) )
Sakai,S. ( Univ.of Tokushima (Japan) )
Osinski,M. ( Univ.of Tokushima (Japan) )
さらに 1 件
掲載資料名:
Optoelectronic Materials and Devices
シリーズ名:
Proceedings of SPIE - the International Society for Optical Engineering
シリーズ巻号:
3419
発行年:
1998
開始ページ:
7
終了ページ:
15
出版情報:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819428738 [0819428736]
言語:
英語
請求記号:
P63600/3419
資料種別:
国際会議録

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