Analysis of the generation of the misfit dislocations during the boron prediffusion in silicon

Analysis of the generation of the misfit dislocations during the boron prediffusion in silicon

著者名:

Gaiseanu,F. ( National Institute of Research-Development for Microtechnology (Roman ia) )
Kissinger,C. ( Institute of Semiconductor Physics (Germany) )
Kruger,D. ( Institute of Semiconductor Physics (Germany) )
Richter,H. ( Institute of Semiconductor Physics (Germany) )

掲載資料名:

Process, Equipment, and Materials Control in Integrated Circuit Manufacturing IV

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3507

発行年:

1998

開始ページ:

281

終了ページ:

289

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819429667 [081942966X]

言語:

英語

請求記号:

P63600/3507

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020632
シリーズID:	PA00000029
会議名:	Microelectronic Manufacturing : Process, Equipment, and Materials Control in Integrated Circuit Manufacturing
回次:	1998 : 4th
会議開催地:	Santa Clara, CA, USA
会議開催年:	1998.09.23-1998.09.24

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