Removal of SiO2 from Si(100) by Remote H2/SiH4 Plasma Prior to Epitaxial Growth

Removal of SiO2 from Si(100) by Remote H2/SiH4 Plasma Prior to Epitaxial Growth

著者名:

掲載資料名:

Ultraclean semiconductor processing technology and surface chemical cleaning and passivation : Symposum held April 17-19, 1995, San Francisco, California, USA

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

386

発行年:

1995

開始ページ:

351

出版情報:

Pittsburgh, PA: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558992894 [1558992898]

言語:

英語

請求記号:

M23500/386

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020319
シリーズID:	PA00000011
会議名:	Symposium on ultraclean semiconductor processing technology and surface chemical cleaning and passivation
回次:	1995
会議開催地:	San Francisco, CA, USA
会議開催年:	1995.04.17-1995.04.19

類似資料:

1 国際会議録 RIE Passivation Layer Removal by Remote H-Plasma and H2/SiH4 Plasma Processing Ying, Hong, Barnak, J. P., Chen, Y. L., Nemanich, R. J. MRS - Materials Research Society	7 国際会議録 PLASMA SURFACE INTERACTIONS AND SURFACE PRORERTIES FOR REMOTE H-PLASMA CLEANING OF Si(100) Schneider, T. P., Cho, J., Chen, Y. L., Maher, D. M., Nemanich, R. J. MRS - Materials Research Society
2 国際会議録 Removal of Fluorine from a Si(100) Surface by a Remote rf hydrogen Plasma Barnak, J. P., King, S., Montgomery, J., Ku, Ja-Hum, Nemanich, R. J. MRS - Materials Research Society	8 国際会議録 Si(100) SURFACE PREPARATION BY IN-SITU OR IN-VACUO EXPOSURE TO REMOTELY PLASMA-GENERATED ATOMIC HYDROGEN: APPLICATIONS TO DEPOSITED SiO2 AND EPITAXIAL GROWTH OF … Yasuda, T., Ma, Y., Habermehl, S., Kim, S.S., Lucovsky, G., Schneider, T.P., Cho, J., Nemanich R.J. Materials Research Society
3 国際会議録 REDUCTION OF SURFACE ROUGHENING AND SUBSURFACE DEFECTS IN H-PLASMA CLEANING OF Si (100) Schneider, T.P., Montgomery, J.S., Ying, H., Barnak, J.P., Chen, Y.L., Maher, D.M., Nemanich, R.J. Electrochemical Society	9 国際会議録 A STUDY OF SURFACE AND SUBSURFACE PROPERTIES OF Si(100) AFTER HYDROGEN ION-BEAM EXPOSURE Liu, H. X., Schneider, T. P., Montgomery, J., Chen, Y. L., Buczkowski, A., Shimura, F., Nemanich, R. J., Maher, D. M., … MRS - Materials Research Society
4 国際会議録 Correlation of Roughness and Device Properties for Hydrogen Plasma Cleaning of Si(100) Prior to Gate Oxidation Montgomery, J. S., Barnak, J. P., Silvestre, C., Hauser, J. R., Nemanich, R. J. MRS - Materials Research Society	10 国際会議録 Deposition of SiO2 by Remote Plasma CVD with SiH4-N2O Rhee, S.-W., Park, Y.-B., Kang, J.-K. American Institute of Chemical Engineers
5 国際会議録 HYDROGEN PLASMA CLEANING PRIOR TO LOW TEMPERATURE GATE OXIDE DEPOSITION IN CLUSTER FABRICATED MOSFETs Montgomery, J.S., Barnak, J.P., Bayoumi, A., Hauser, J.R., Nemanich, R.J. Electrochemical Society	11 国際会議録 Ex Situ and In Situ Methods for Oxide and Carbon Removal from AlN and GaN Surfaces King, Sean W., Smith, Laura L., Barnak, John P., Ku, Ja-Hum, Christman, Jim A., Benjamin, Mark C., Bremser, Michael D., … MRS - Materials Research Society
6 国際会議録 PLASMA-SURFACE INTERACTION LIMITS FOR REMOTE H-PLASMA CLEANING OF Si(100) Schneider, T.P., Bernhard, B.L., Chen, Y.L., Nemanich, R.J. Materials Research Society	12 国際会議録 Epitaxial growth of FeSi2 on (111)Si Cheng, H. C., Chen, L. J., Your, T. R. North-Holland

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