Time-Dependent Dielectric Breakdown in Thin Intrinsic SiO2 Films
- 著者名:
- 掲載資料名:
- Ultraclean semiconductor processing technology and surface chemical cleaning and passivation : Symposum held April 17-19, 1995, San Francisco, California, USA
- シリーズ名:
- Materials Research Society symposium proceedings
- シリーズ巻号:
- 386
- 発行年:
- 1995
- 開始ページ:
- 227
- 出版情報:
- Pittsburgh, PA: MRS - Materials Research Society
- ISSN:
- 02729172
- ISBN:
- 9781558992894 [1558992898]
- 言語:
- 英語
- 請求記号:
- M23500/386
- 資料種別:
- 国際会議録
類似資料:
MRS - Materials Research Society |
7
国際会議録
A Reliability Model for Time Dependent Dielectric Breakdown (TDDB) in Silicon Nitride Capacitors
Electrochemical Society |
2
国際会議録
Characterization of intrinsic thin silicon dioxide breakdown under static and dynamic stress
SPIE-The International Society for Optical Engineering |
Materials Research Society |
MRS - Materials Research Society |
Electrochemical Society |
Electrochemical Society | |
Trans Tech Publications |
Materials Research Society |
6
国際会議録
Low-temperature processing of SiO2 thin films by HD-PECVD technique for gate dielectric applications
SPIE-The International Society for Optical Engineering |
Electrochemical Society |