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Two Step O2/N2O Plasma Annealing for the Reduction of Leakage Current in Amorphous Ta2O5 Films

著者名:
Lau, W. S.
Perera, M. T. Chandima
Han, T.
Sandler, N. P.
Tung, C. H.
Sheng, T. T.
Chu, P. K.
Chong, T. C.
さらに 3 件
掲載資料名:
Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
567
発行年:
1999
開始ページ:
501
出版情報:
Warrendale, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994744 [1558994742]
言語:
英語
請求記号:
M23500/567
資料種別:
国際会議録

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