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Modeling the Dependence of the Gate Current on Ge Content in Ultrathin Gate Dielectric PMOS Devices With Poly-Si1-xGex Gate Material

著者名:
Shanware, A.
Massoud, H. Z.
Acker, A.
Li, V. Z. Q.
Mirabedini, M. R.
Henson, K.
Hauser, J. R.
Wortman, J. J.
さらに 3 件
掲載資料名:
Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
567
発行年:
1999
開始ページ:
127
出版情報:
Warrendale, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994744 [1558994742]
言語:
英語
請求記号:
M23500/567
資料種別:
国際会議録

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