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Formation of High-Quality Oxynitride Gate Dielectrics by High Pressure Thermal Oxidation of Si in NO

著者名:
Song, S. C.
Lee, C. H.
Luan, H. F.
Kwong, D. L.
Gardner, M.
Fulford, J.
Allen, M.
Bloom, J.
Evans, R.
さらに 4 件
掲載資料名:
Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
567
発行年:
1999
開始ページ:
65
出版情報:
Warrendale, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558994744 [1558994742]
言語:
英語
請求記号:
M23500/567
資料種別:
国際会議録

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