Blank Cover Image

Reactive Ion Etching (RIE)-Induced p- to n-Type Conversion in Extrinsically-Doped p-Type HgCdTe

著者名:
Musca, C. A.
Smith, E. P. G.
Siliquini, J. F.
Dell, J. M.
Antoszewski, J.
Piotrowski, J.
Faraone, L.
さらに 2 件
掲載資料名:
Semiconductors for room-temperature radiation detector applications II : symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
487
発行年:
1997
開始ページ:
631
出版情報:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558993921 [1558993924]
言語:
英語
請求記号:
M23500/487
資料種別:
国際会議録

類似資料:

1 国際会議録 Reactive Ion Etching (RIE)-Induced p- to n-Type Conversion in Extrinsically-Doped p-Type HgCdTe

Musca, C. A., Smith, E. P. G., Siliquini, J. F., Dell, J. M., Antoszewski, J., Piotrowski, J., Faraone, L.

MRS - Materials Research Society
7 国際会議録 1/f noise in HgCdTe infrared gated photodiodes

R. J. Westerhout, C. A. Musca, J. Antoszewski, J. M. Dell, L. Faraone

SPIE - The International Society of Optical Engineering
2 国際会議録 Performance of MWIR HgCdTe Photovoltaic Detectors Fabricated by Reactive Ion Etching Induced Type Conversion

Rais,M.H., Musca,C.A., Dell,J.M., Antoszewski,J., Nener,B.D., Faraone,L.

SPIE - The International Society for Optical Engineering
8 国際会議録 The effects of vacuum baking on the I-V characteristics of LWIR HgCdTe photodiodes

Nguyen, T.H., Musca, C.A., Dell, J.M., Antoszewski, J., Faraone, L.

SPIE - The International Society of Optical Engineering
3 国際会議録 HgCdTe long-wavelength infrared photovoltaic detectors formed by reactive ion etching

Nguyen, T.T., Dell, J.M., Musca, C.A., Antoszewski, J., Faraone, L.

SPIE-The International Society for Optical Engineering
9 国際会議録 Isothermal vapor phase epitaxy as a versatile technology for infrared photodetectors

Adamiec,K., Grudzien,M., Nowak,Z., Pawluczyk,J., Piotrowski,J., Antoszewski,J., Dell,J.M., Musca,C.A., Faraone,L.

SPIE-The International Society for Optical Engineering
4 国際会議録 RIE-induced n-on-p junction HgCdTe photodiodes: effects of passivant technology on bake stability

Dell,J.M., Antoszewski,J., White,J.K., Pal,R., Nguyen,T., Musca,C.A., Faraone,L.

SPIE-The International Society for Optical Engineering
10 国際会議録 Determination of residual stress in low-temperature PECVD silicon nitride thin films

Martyniuk, M.P., Antoszewski, J., Musca, C.A., Dell, J.M., Faraone, L.

SPIE - The International Society of Optical Engineering
5 国際会議録 Carrier transport characterization of high-density plasma-induced p-to-n type converted MWIR HgCdTe material [6206-83]

Park B. A., Musca C. A., Antoszewski J., Nguyen T., Winchester K. J., Dell J. M., Faraone L.

SPIE - The International Society of Optical Engineering
11 国際会議録 Laser-beam-induced current technique as a quantitative tool for HgCdTe photodiode characterization

Musca,C.A., Redfern,D.A., Dell,J.M., Faraone,L.

SPIE - The International Society for Optical Engineering
6 国際会議録 Thermal Stability in HgCdTe IR Photodiodes

Dell, J.M., Nguyen, T., Musca, C.A., Antoszewski, J., Faraone, L., Pal, R.

Materials Research Society
12 国際会議録 Resonant-cavity-enhanced HgCdTe photodetectors [6206-113]

Wehner J. G. A., Musca C. A., Sewell R. H., Dell J. M., Faraone L.

SPIE - The International Society of Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12