Effects of Cu and Si Dopants on Electromigration Mass Transport in Al Interconnects for VLSI

Effects of Cu and Si Dopants on Electromigration Mass Transport in Al Interconnects for VLSI

著者名:

Lee, C. H.

掲載資料名:

Polycrystalline thin films II : structure, properties, and applications : symposium held November 27-December 1, 1995, Boston, Massachusetts, U.S.A.

シリーズ名:

Materials Research Society symposium proceedings

シリーズ巻号:

403

発行年:

1996

開始ページ:

507

出版情報:

Pittsburgh, Pa.: MRS - Materials Research Society

ISSN:

02729172

ISBN:

9781558993068 [1558993061]

言語:

英語

請求記号:

M23500/403

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020303
シリーズID:	PA00000011
会議名:	Symposium on polycrystalline thin films
回次:	2nd
会議開催地:	Boston, MA, USA
会議開催年:	1995.11.27-1995.12.01

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