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THE GROWTH AND IN-SITU DOPING OF SiGe/Si STRAINED HETEROSTRUCTURES BY RTP/VLP-CVD

著者名:
Gu, S.
Zheng, Y.
Zhang, R.
Wang, R.
Han, P.
Huang, X.
Zhong, P.
Hu, L.
Zhu, S.
Chen, J. N.
さらに 5 件
掲載資料名:
Rapid thermal and integrated processing III : symposium held April 4-7, 1994, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
342
発行年:
1994
開始ページ:
57
出版情報:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992429 [1558992421]
言語:
英語
請求記号:
M23500/342
資料種別:
国際会議録

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