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STEADY-STATE VERSUS RAPID THERMAL ANNEALING OF PHOSPHORUS-IMPLANTED PSEUDOMORPHIC Si(100)/Ge0.12Si0.88

著者名:
Lie, D. Y. C.
Song, J. H.
Theodore, N. D.
Eisen, F.
Nicolet, M. -A.
Carns, T. K.
Wang, K. L.
Kinoshita, H.
Huang, T-H.
Kwong, D. L.
さらに 5 件
掲載資料名:
Rapid thermal and integrated processing III : symposium held April 4-7, 1994, San Francisco, California, U.S.A.
シリーズ名:
Materials Research Society symposium proceedings
シリーズ巻号:
342
発行年:
1994
開始ページ:
51
出版情報:
Pittsburgh, PA: MRS - Materials Research Society
ISSN:
02729172
ISBN:
9781558992429 [1558992421]
言語:
英語
請求記号:
M23500/342
資料種別:
国際会議録

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