Photoresist characterization for lithography simulation:III.Development parameter measurements

Photoresist characterization for lithography simulation:III.Development parameter measurements

著者名:

Henderson,C.L. ( Univ.of Texas at Austin )

掲載資料名:

Advances in resist technology and processing XIV : 10-12 March 1997, Santa Clara, California

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

3049

発行年:

1997

開始ページ:

805

終了ページ:

815

出版情報:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819424631 [0819424633]

言語:

英語

請求記号:

P63600/3049

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020295
シリーズID:	PA00000029
会議名:	SPIE Advanced Lithography : Advances in resist technology and processing
回次:	1997 : 14th
会議開催地:	Santa Clara, CA, USA
会議開催年:	1997.03.10-1997.03.12

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