Excitonic Transitions in GaN Epitayer Lasers Grown by MOCVD,

Excitonic Transitions in GaN Epitayer Lasers Grown by MOCVD,

著者名:

Chen,G.

掲載資料名:

Optics for science and new technology : 17th Congress of the International Commission for Optics, August 19-23, 1996, Hotel Riviera(Yusong), Taejon Korea

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

2778

発行年:

1996

巻:

Part2

開始ページ:

642

終了ページ:

643

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819421647 [0819421642]

言語:

英語

請求記号:

P63600/2778

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020268
シリーズID:	PA00000029
会議名:	Congress of the International Commission for Optics
回次:	1996 : 17th
会議開催地:	Taejon, Korea
会議開催年:	1996.09.19-1996.08.23

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