In-situ wafer curvature measurements during rapid thermal annealing of Si(100)wafers

In-situ wafer curvature measurements during rapid thermal annealing of Si(100)wafers

著者名:

Jongste,J.F. ( Delft Univ.of Technology )
Oosterlaken,T.G.M.
Bart,G.C.J.
Janssen,G.C.A.M.
Radelaar,S.

掲載資料名:

Process, Equipment, and Materials Control in Integrated Circuit Manufacturing

シリーズ名:

Proceedings of SPIE - the International Society for Optical Engineering

シリーズ巻号:

2637

発行年:

1995

開始ページ:

102

終了ページ:

112

出版情報:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819420039 [0819420034]

言語:

英語

請求記号:

P63600/2637

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020254
シリーズID:	PA00000029
会議名:	SPIE Advanced Lithography : Microelectronic Manufacturing : Process, Equipment, and Materials Control in Integrated Circuit Manufacturing
回次:	1995
会議開催地:	Austin, TX, USA
会議開催年:	1995.10.25-1995.10.26

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