High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiC

High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiC

著者名:

Schmidt,J.

掲載資料名:

Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997

シリーズ名:

Materials science forum

シリーズ巻号:

264-268

発行年:

1998

巻:

Part1

開始ページ:

587

終了ページ:

590

出版情報:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878497911 [0878497919]

言語:

英語

請求記号:

M23650

資料種別:

国際会議録

詳細

TDL書誌ID:	ZA00020223
シリーズID:	PA00000012
会議名:	ICSCIII-N : International Conference on Silicon Carbide, III-Nitrides Related Materials
回次:	1997 : 7th
会議開催地:	Stockholm, Sweden
会議開催年:	1997.09.00

類似資料:

1 国際会議録 High-frequency EPR studies of shallow and deep boron acceptors in 6H-SiC.(Invited) Schmidt,J., Matsumoto,T., Poluektov,O.G., Arnold,A., Ikoma,T., Baranov,P.G., Mokhov,E.N. Trans Tech Publications	7 国際会議録 Evidence of the Ground Triplet State of Silicon-Carbon Divacancies (P6, P7 Centers) in 6H SiC: An EPR Study Ilyin, I.V., Muzafarova, M.V., Mokhov, E.N., Sankin, V.I., Baranov, P.G., Orlinskii, S.B., Schmidt, J. Trans Tech Publications
2 国際会議録 The Spatial Distribution of the Electronic Wave Function of the Shallow Boron Acceptor in 4H- and 6H-SiC Duijn-Arnold, A. v., Mol, J., Verberk, R., Schmidt, J., Mokhov, E. N., Baranov, P. G. Trans Tech Publications	8 国際会議録 Probing of the Wave Function of Shallow Donors and Acceptors by EPR in SiC Crystals with Changed Isotopic Composition Muzafarova, M. V., Ilyin, I. V., Mokhov, E. N., Baranov, P. G., Ber, B. Ya., Ionov, A. N., Kop'ev, P. S., Kaliteevskii, … Trans Tech Publications
3 国際会議録 The Electronic Structure of the Be Acceptor Centers in 6H-SiC Duijn-Arnold, A. v., Schmidt, J., Poluektov, O. G., Baranov, P. G., Mokhov, E. N. Trans Tech Publications	9 国際会議録 X-Band ENDOR of Boron and Beryllium Acceptors in Silicon Carbide Hofstaetter,A., Meyer,B.K., Scharmann,A., Baranov,P.G., Ilyin,I.V., Mokhov,E.N. Trans Tech Publications
4 国際会議録 The Electronic Structure of the N Donor Center in 4H-SiC and 6H-SiC van Duijn-Arnold, A., Zondervan, R., Baranov, P.G., Mokhov, E.N., Schmidt, J. Trans Tech Publications	10 国際会議録 Identification of Iron and Nickel in 6H-SiC by Electron Paramagnetic Resonance Baranov, P.G., Ilyin, I.V., Mokhov, E.N., Khramtsov, V.A. Trans Tech Publications
5 国際会議録 Phosphorus-Related Shallow and Deep Defects in 6H-SiC Baranov, P.G., Ilyin, I.V., Mokhov, E.N., von Bardeleben, H.J., Cantin, J.L. Trans Tech Publications	11 国際会議録 Intrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement Threshold von Bardeleben, H.J., Cantin, J.L., Baranov, P.G., Mokhov, E.N. Trans Tech Publications
6 国際会議録 EPR of Deep Al and Deep B in Heavily Al-doped as Grown 4H-SiC Ilyin, I.V., Mokhov, E.N., Baranov, P.G. Trans Tech Publications	12 国際会議録 Electronic Structure of Acceptors in Silicon Carbide Baranov,P.G. Trans Tech Publications

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