Blank Cover Image

Electronic Structure of Acceptors in Silicon Carbide

著者名:
Baranov,P.G.  
掲載資料名:
Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997
シリーズ名:
Materials science forum
シリーズ巻号:
264-268
発行年:
1998
巻:
Part1
開始ページ:
581
終了ページ:
586
出版情報:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878497911 [0878497919]
言語:
英語
請求記号:
M23650
資料種別:
国際会議録

類似資料:

1 国際会議録 X-Band ENDOR of Boron and Beryllium Acceptors in Silicon Carbide

Hofstaetter,A., Meyer,B.K., Scharmann,A., Baranov,P.G., Ilyin,I.V., Mokhov,E.N.

Trans Tech Publications
7 国際会議録 High-frequency EPR studies of shallow and deep boron acceptors in 6H-SiC.(Invited)

Schmidt,J., Matsumoto,T., Poluektov,O.G., Arnold,A., Ikoma,T., Baranov,P.G., Mokhov,E.N.

Trans Tech Publications
2 国際会議録 Eleetron Paramaguetic Resonance of Erbium in Bulk Silicon Carbide Crystals

Baranov,P.G., Ilyin,I.V., Mokhov,E.N.

Trans Tech Publications
8 国際会議録 High-Frequency EPR Studies of Shallow and Deep Boron Acceptors in 6H-SiC

Schmidt,J., Matsumoto,T.M., Poiuektov,O.G., Duijn-Arnold,A.van, Ikoma,T., Baranov,P.G., Mokhov,E.N.

Trans Tech Publications
3 国際会議録 Electron paramagnetic resonance of erbium in bulk silicon carbide crystals

Baranov,P.G., Ilyin,I.V., Mokhov,E.N.

Trans Tech Publications
9 国際会議録 The Spatial Distribution of the Electronic Wave Function of the Shallow Boron Acceptor in 4H- and 6H-SiC

Duijn-Arnold, A. v., Mol, J., Verberk, R., Schmidt, J., Mokhov, E. N., Baranov, P. G.

Trans Tech Publications
4 国際会議録 The Electronic Structure of the Be Acceptor Centers in 6H-SiC

Duijn-Arnold, A. v., Schmidt, J., Poluektov, O. G., Baranov, P. G., Mokhov, E. N.

Trans Tech Publications
10 国際会議録 *PROGRESS IN SILICON CARBIDE SEMICONDUCTOR TECHNOLOGY

Powell, J.A., Neudeck, P.G., Matus, L.G., Petit, J.B.

Materials Research Society
5 国際会議録 Identification of the Triplet State N-V Defect in Neutron Irradiated Silicon Carbide by Electron Paramagnetic Resonance

Muzafarova, M.V., Ilyin, I.V., Mokhov, E.N., Sankin, V.I., Baranov, P.G.

Trans Tech Publications
11 国際会議録 Intrinsic Defects in 6H-SiC Generated by Electron Irradiation at the Silicon Displacement Threshold

von Bardeleben, H.J., Cantin, J.L., Baranov, P.G., Mokhov, E.N.

Trans Tech Publications
6 国際会議録 The Electronic Structure of the N Donor Center in 4H-SiC and 6H-SiC

van Duijn-Arnold, A., Zondervan, R., Baranov, P.G., Mokhov, E.N., Schmidt, J.

Trans Tech Publications
12 国際会議録 Silicon Carbide Differential Amplifiers for High-Temperature Sensing

A. Patil, X.A. Fu, P.G. Neudeck, G.M. Beheim, M. Mehregany

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12